Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Through Hole
Package Type
TO-220
Maximum Continuous Forward Current If
12A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
STPSC12065
Pin Count
2
Peak Reverse Current Ir
50μA
Maximum Forward Voltage Vf
1.65V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
220A
Maximum Operating Temperature
175°C
Length
15.95mm
Height
4.3mm
Standards/Approvals
No
Width
10.98mm
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics 650V power schottky silicon carbide diode is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. Its high forward surge capability ensures good robustness during transient phases.
Informacije o stanju skladišta trenutno nisu dostupne.
KM 354,58
KM 7,092 Each (In a Tube of 50) (bez PDV-a)
KM 414,86
KM 8,298 Each (In a Tube of 50) (s PDV-om)
50
KM 354,58
KM 7,092 Each (In a Tube of 50) (bez PDV-a)
KM 414,86
KM 8,298 Each (In a Tube of 50) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
50
| količina | Jedinična cijena | Po cijev |
|---|---|---|
| 50 - 200 | KM 7,092 | KM 354,58 |
| 250+ | KM 6,756 | KM 337,80 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Through Hole
Package Type
TO-220
Maximum Continuous Forward Current If
12A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
STPSC12065
Pin Count
2
Peak Reverse Current Ir
50μA
Maximum Forward Voltage Vf
1.65V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
220A
Maximum Operating Temperature
175°C
Length
15.95mm
Height
4.3mm
Standards/Approvals
No
Width
10.98mm
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics 650V power schottky silicon carbide diode is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. Its high forward surge capability ensures good robustness during transient phases.