Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Through Hole
Package Type
TO-220
Maximum Continuous Forward Current If
12A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
STPSC12065
Pin Count
2
Peak Reverse Current Ir
50μA
Maximum Forward Voltage Vf
1.65V
Peak Non-Repetitive Forward Surge Current Ifsm
220A
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Length
15.95mm
Height
4.3mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics 650V power schottky silicon carbide diode is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. Its high forward surge capability ensures good robustness during transient phases.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
KM 353,46
KM 7,069 Each (In a Tube of 50) (bez PDV-a)
KM 413,55
KM 8,271 Each (In a Tube of 50) (s PDV-om)
50
KM 353,46
KM 7,069 Each (In a Tube of 50) (bez PDV-a)
KM 413,55
KM 8,271 Each (In a Tube of 50) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
50
| količina | Jedinična cijena | Po cijev |
|---|---|---|
| 50 - 200 | KM 7,069 | KM 353,46 |
| 250+ | KM 6,734 | KM 336,68 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Through Hole
Package Type
TO-220
Maximum Continuous Forward Current If
12A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
STPSC12065
Pin Count
2
Peak Reverse Current Ir
50μA
Maximum Forward Voltage Vf
1.65V
Peak Non-Repetitive Forward Surge Current Ifsm
220A
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Length
15.95mm
Height
4.3mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics 650V power schottky silicon carbide diode is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. Its high forward surge capability ensures good robustness during transient phases.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
