Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Mount Type
Through Hole
Package Type
TO-247
Maximum Continuous Forward Current If
40A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Dual
Series
STPS
Rectifier Type
Rectifier Diode
Pin Count
3
Minimum Operating Temperature
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
140A
Maximum Operating Temperature
175°C
Length
15.75mm
Height
34.95mm
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics schottky silicon carbide diode available in TO-247, is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
KM 45,61
KM 45,61 Each (bez PDV-a)
KM 53,36
KM 53,36 Each (s PDV-om)
Standard
1
KM 45,61
KM 45,61 Each (bez PDV-a)
KM 53,36
KM 53,36 Each (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
1
| količina | Jedinična cijena |
|---|---|
| 1 - 9 | KM 45,61 |
| 10+ | KM 29,95 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Mount Type
Through Hole
Package Type
TO-247
Maximum Continuous Forward Current If
40A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Dual
Series
STPS
Rectifier Type
Rectifier Diode
Pin Count
3
Minimum Operating Temperature
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
140A
Maximum Operating Temperature
175°C
Length
15.75mm
Height
34.95mm
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics schottky silicon carbide diode available in TO-247, is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
