Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Surface
Package Type
TO-263
Maximum Continuous Forward Current If
4A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
STPSC
Pin Count
2
Peak Reverse Current Ir
35μA
Maximum Forward Voltage Vf
2.25V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
200A
Maximum Operating Temperature
175°C
Length
28.25mm
Height
4.5mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics 650V high surge silicon carbide power schottky diode has a current rating of 4A. It is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. Its high forward surge capability ensures good robustness during transient phases. This SiC diode will boost the performance in hard switching condition.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
KM 8.780,62
KM 3,512 Each (On a Reel of 2500) (bez PDV-a)
KM 10.273,32
KM 4,109 Each (On a Reel of 2500) (s PDV-om)
2500
KM 8.780,62
KM 3,512 Each (On a Reel of 2500) (bez PDV-a)
KM 10.273,32
KM 4,109 Each (On a Reel of 2500) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
2500
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Surface
Package Type
TO-263
Maximum Continuous Forward Current If
4A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
STPSC
Pin Count
2
Peak Reverse Current Ir
35μA
Maximum Forward Voltage Vf
2.25V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
200A
Maximum Operating Temperature
175°C
Length
28.25mm
Height
4.5mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics 650V high surge silicon carbide power schottky diode has a current rating of 4A. It is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. Its high forward surge capability ensures good robustness during transient phases. This SiC diode will boost the performance in hard switching condition.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
