Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
60V
Package Type
SOIC
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
15nC
Maximum Operating Temperature
150°C
Transistor Configuration
Isolated
Height
1.25mm
Length
5mm
Standards/Approvals
No
Number of Elements per Chip
2
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
KM 33,22
KM 6,644 Each (In a Pack of 5) (bez PDV-a)
KM 38,87
KM 7,774 Each (In a Pack of 5) (s PDV-om)
Standard
5
KM 33,22
KM 6,644 Each (In a Pack of 5) (bez PDV-a)
KM 38,87
KM 7,774 Each (In a Pack of 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
| količina | Jedinična cijena | Po pakovanje |
|---|---|---|
| 5 - 45 | KM 6,644 | KM 33,22 |
| 50 - 120 | KM 5,816 | KM 29,08 |
| 125+ | KM 4,765 | KM 23,83 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
60V
Package Type
SOIC
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
15nC
Maximum Operating Temperature
150°C
Transistor Configuration
Isolated
Height
1.25mm
Length
5mm
Standards/Approvals
No
Number of Elements per Chip
2
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
