Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-247
Series
DM6
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
91mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
52.5nC
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.75mm
Height
20.15mm
Standards/Approvals
No
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
KM 514,09
KM 17,136 Each (In a Tube of 30) (bez PDV-a)
KM 601,48
KM 20,049 Each (In a Tube of 30) (s PDV-om)
30
KM 514,09
KM 17,136 Each (In a Tube of 30) (bez PDV-a)
KM 601,48
KM 20,049 Each (In a Tube of 30) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
30
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-247
Series
DM6
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
91mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
52.5nC
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.75mm
Height
20.15mm
Standards/Approvals
No
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
