Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
72A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-247-4
Mount Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance Rds
39mΩ
Detalji o proizvodu
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies andZVS phase-shift converters.
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Cijena na upit
Each (In a Tube of 30) (bez PDV-a)
30
Cijena na upit
Each (In a Tube of 30) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
30
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
72A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-247-4
Mount Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance Rds
39mΩ
Detalji o proizvodu
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies andZVS phase-shift converters.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
