Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
30V
Package Type
TO-247
Series
STW
Mount Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
118nC
Maximum Power Dissipation Pd
480W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Length
40.92mm
Height
5.1mm
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Detalji o proizvodu
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
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Informacije o stanju skladišta trenutno nisu dostupne.
KM 290,82
KM 29,08 Each (Supplied in a Tray) (bez PDV-a)
KM 340,26
KM 34,02 Each (Supplied in a Tray) (s PDV-om)
Proizvodno pakovanje (pakovanje)
10
KM 290,82
KM 29,08 Each (Supplied in a Tray) (bez PDV-a)
KM 340,26
KM 34,02 Each (Supplied in a Tray) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakovanje (pakovanje)
10
| količina | Jedinična cijena |
|---|---|
| 10 - 119 | KM 29,08 |
| 120+ | KM 26,85 |
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PRIDRUŽITE SE BESPLATNO
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Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
30V
Package Type
TO-247
Series
STW
Mount Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
118nC
Maximum Power Dissipation Pd
480W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Length
40.92mm
Height
5.1mm
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Detalji o proizvodu
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
