Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
680mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
85W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
100nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
2.17mm
Length
6.6mm
Standards/Approvals
No
Width
6.2mm
Automotive Standard
No
Detalji o proizvodu
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
€ 3.125,00
€ 1,25 komadno (u namotaju od 2500) (bez PDV-a)
€ 3.656,25
€ 1,462 komadno (u namotaju od 2500) (s PDV-om)
2500
€ 3.125,00
€ 1,25 komadno (u namotaju od 2500) (bez PDV-a)
€ 3.656,25
€ 1,462 komadno (u namotaju od 2500) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
2500
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
680mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
85W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
100nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
2.17mm
Length
6.6mm
Standards/Approvals
No
Width
6.2mm
Automotive Standard
No
Detalji o proizvodu
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
