Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
338mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
15.3nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
6.2mm
Height
2.4mm
Length
6.6mm
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast-recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
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PRIDRUŽITE SE BESPLATNO
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Informacije o stanju skladišta trenutno nisu dostupne.
€ 3.925,00
€ 1,57 komadno (u namotaju od 2500) (bez PDV-a)
€ 4.592,25
€ 1,837 komadno (u namotaju od 2500) (s PDV-om)
2500
€ 3.925,00
€ 1,57 komadno (u namotaju od 2500) (bez PDV-a)
€ 4.592,25
€ 1,837 komadno (u namotaju od 2500) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
2500
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
338mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
15.3nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
6.2mm
Height
2.4mm
Length
6.6mm
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast-recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
