Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
40A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
283W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Operating Temperature
175°C
Length
15.75mm
Height
20.15mm
Standards/Approvals
RoHS
Width
5.15mm
Series
H
Automotive Standard
No
Detalji o proizvodu
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 103,00
€ 5,15 komadno (isporučuje se u cijevi) (bez PDV-a)
€ 120,51
€ 6,026 komadno (isporučuje se u cijevi) (s PDV-om)
Proizvodno pakovanje (cijev)
20
€ 103,00
€ 5,15 komadno (isporučuje se u cijevi) (bez PDV-a)
€ 120,51
€ 6,026 komadno (isporučuje se u cijevi) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakovanje (cijev)
20
| količina | Jedinična cijena | Po cijev |
|---|---|---|
| 20 - 98 | € 5,15 | € 10,30 |
| 100 - 198 | € 4,80 | € 9,60 |
| 200+ | € 4,30 | € 8,60 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
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Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
40A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
283W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Operating Temperature
175°C
Length
15.75mm
Height
20.15mm
Standards/Approvals
RoHS
Width
5.15mm
Series
H
Automotive Standard
No
Detalji o proizvodu
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
