Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
469W
Package Type
TO-3P
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Series
HB
Automotive Standard
No
Detalji o proizvodu
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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PRIDRUŽITE SE BESPLATNO
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Informacije o stanju skladišta trenutno nisu dostupne.
€ 48,50
€ 4,85 komadno (isporučuje se u cijevi) (bez PDV-a)
€ 56,74
€ 5,67 komadno (isporučuje se u cijevi) (s PDV-om)
Proizvodno pakovanje (cijev)
10
€ 48,50
€ 4,85 komadno (isporučuje se u cijevi) (bez PDV-a)
€ 56,74
€ 5,67 komadno (isporučuje se u cijevi) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakovanje (cijev)
10
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
469W
Package Type
TO-3P
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Series
HB
Automotive Standard
No
Detalji o proizvodu
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
