Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsMount Type
Through Hole
Product Type
Rectifier & Schottky Diode
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
650V
Series
STPSC2
Diode Configuration
2x Common Cathode Pair
Rectifier Type
Schottky
Pin Count
2
Peak Reverse Current Ir
200μA
Maximum Forward Voltage Vf
1.45V
Peak Reverse Recovery Time trr
0ns
Standards/Approvals
RoHS, AEC‑Q101, ECOPACK2, PPAP
Automotive Standard
AEC-Q101
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics SiC Diode, molded in a DO-247 LL package with long leads, is an ultra-high-performance power Schottky rectifier. It is built using a silicon carbide substrate, enabling a low VF Schottky structure with a 650 V rating. Thanks to its Schottky design, it exhibits no recovery at turn-off and minimal ringing. Its capacitive turn-off behaviour is very low and remains stable across temperature variations.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
€ 48,60
€ 1,62 Each (In a Tube of 30) (bez PDV-a)
€ 56,86
€ 1,895 Each (In a Tube of 30) (s PDV-om)
30
€ 48,60
€ 1,62 Each (In a Tube of 30) (bez PDV-a)
€ 56,86
€ 1,895 Each (In a Tube of 30) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
30
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsMount Type
Through Hole
Product Type
Rectifier & Schottky Diode
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
650V
Series
STPSC2
Diode Configuration
2x Common Cathode Pair
Rectifier Type
Schottky
Pin Count
2
Peak Reverse Current Ir
200μA
Maximum Forward Voltage Vf
1.45V
Peak Reverse Recovery Time trr
0ns
Standards/Approvals
RoHS, AEC‑Q101, ECOPACK2, PPAP
Automotive Standard
AEC-Q101
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics SiC Diode, molded in a DO-247 LL package with long leads, is an ultra-high-performance power Schottky rectifier. It is built using a silicon carbide substrate, enabling a low VF Schottky structure with a 650 V rating. Thanks to its Schottky design, it exhibits no recovery at turn-off and minimal ringing. Its capacitive turn-off behaviour is very low and remains stable across temperature variations.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
