Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Mount Type
Through Hole
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
2x Common Cathode Pair
Series
STPSC2
Rectifier Type
Schottky
Pin Count
2
Peak Reverse Current Ir
200μA
Maximum Forward Voltage Vf
1.45V
Peak Reverse Recovery Time trr
0ns
Standards/Approvals
AEC‑Q101, RoHS, ECOPACK2, PPAP
Automotive Standard
AEC-Q101
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics SiC Diode, molded in a DO-247 LL package with long leads, is an ultra-high-performance power Schottky rectifier. It is built using a silicon carbide substrate, enabling a low VF Schottky structure with a 650 V rating. Thanks to its Schottky design, it exhibits no recovery at turn-off and minimal ringing. Its capacitive turn-off behaviour is very low and remains stable across temperature variations.
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PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
€ 58,50
€ 1,95 Each (In a Tube of 30) (bez PDV-a)
€ 68,44
€ 2,282 Each (In a Tube of 30) (s PDV-om)
30
€ 58,50
€ 1,95 Each (In a Tube of 30) (bez PDV-a)
€ 68,44
€ 2,282 Each (In a Tube of 30) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
30
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Mount Type
Through Hole
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
2x Common Cathode Pair
Series
STPSC2
Rectifier Type
Schottky
Pin Count
2
Peak Reverse Current Ir
200μA
Maximum Forward Voltage Vf
1.45V
Peak Reverse Recovery Time trr
0ns
Standards/Approvals
AEC‑Q101, RoHS, ECOPACK2, PPAP
Automotive Standard
AEC-Q101
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics SiC Diode, molded in a DO-247 LL package with long leads, is an ultra-high-performance power Schottky rectifier. It is built using a silicon carbide substrate, enabling a low VF Schottky structure with a 650 V rating. Thanks to its Schottky design, it exhibits no recovery at turn-off and minimal ringing. Its capacitive turn-off behaviour is very low and remains stable across temperature variations.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
