Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
4.3V
Maximum Operating Temperature
200°C
Height
34.95mm
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Automotive Standard
AEC-Q101
Detalji o proizvodu
Výkonové tranzistory MOSFET STMicroelectronics pro automobilový průmysl z karbidu křemíku mají velmi těsnou variaci odporu proti teplota. Má velmi vysokou provozní teplotu.
Informacije o stanju skladišta trenutno nisu dostupne.
Cena na upit
Standard
1
Cena na upit
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
1
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
4.3V
Maximum Operating Temperature
200°C
Height
34.95mm
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Automotive Standard
AEC-Q101
Detalji o proizvodu
Výkonové tranzistory MOSFET STMicroelectronics pro automobilový průmysl z karbidu křemíku mají velmi těsnou variaci odporu proti teplota. Má velmi vysokou provozní teplotu.