Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
650V
Series
SCTL35N65G2V
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
4
Maximum Drain Source Resistance Rds
67mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
22V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
73nC
Maximum Power Dissipation Pd
417W
Forward Voltage Vf
3.3V
Maximum Operating Temperature
175°C
Length
8.1mm
Standards/Approvals
No
Width
8.1mm
Height
950μm
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
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Informacije o stanju skladišta trenutno nisu dostupne.
RSD 7.555.088
RSD 2.518,362 komad (u Reel od 3000) (bez PDV-a)
RSD 9.066.105
RSD 3.022,034 komad (u Reel od 3000) (s PDV-om)
3000
RSD 7.555.088
RSD 2.518,362 komad (u Reel od 3000) (bez PDV-a)
RSD 9.066.105
RSD 3.022,034 komad (u Reel od 3000) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
3000
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
650V
Series
SCTL35N65G2V
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
4
Maximum Drain Source Resistance Rds
67mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
22V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
73nC
Maximum Power Dissipation Pd
417W
Forward Voltage Vf
3.3V
Maximum Operating Temperature
175°C
Length
8.1mm
Standards/Approvals
No
Width
8.1mm
Height
950μm
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
