Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
35A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
115W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
40nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Automotive Standard
No
Detalji o proizvodu
Tranzistory MOSFET™ s širokým rozsahem rozkladných napětí nabízejí mimořádně nízké nabití a nízký odpor.
Informacije o stanju skladišta trenutno nisu dostupne.
RSD 8.488
RSD 169,75 komad (isporučivo u Reel) (bez PDV-a)
RSD 10.185
RSD 203,70 komad (isporučivo u Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
50
RSD 8.488
RSD 169,75 komad (isporučivo u Reel) (bez PDV-a)
RSD 10.185
RSD 203,70 komad (isporučivo u Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakovanje (kolut)
50
| količina | Jedinična cena | Po kolut |
|---|---|---|
| 50 - 245 | RSD 169,75 | RSD 849 |
| 250 - 495 | RSD 135,80 | RSD 679 |
| 500+ | RSD 126,10 | RSD 630 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
35A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
115W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
40nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Automotive Standard
No
Detalji o proizvodu
Tranzistory MOSFET™ s širokým rozsahem rozkladných napětí nabízejí mimořádně nízké nabití a nízký odpor.