Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-252
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
16mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
49nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Height
2.4mm
Standards/Approvals
No
Width
6.2mm
Length
6.6mm
Automotive Standard
No
Detalji o proizvodu
Tranzistory MOSFET™ s širokým rozsahem rozkladných napětí nabízejí mimořádně nízké nabití a nízký odpor.
Informacije o stanju skladišta trenutno nisu dostupne.
RSD 2.037
RSD 407,40 komadno (u pakovanju od 5) (bez PDV-a)
RSD 2.444
RSD 488,88 komadno (u pakovanju od 5) (s PDV-om)
Standard
5
RSD 2.037
RSD 407,40 komadno (u pakovanju od 5) (bez PDV-a)
RSD 2.444
RSD 488,88 komadno (u pakovanju od 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
| količina | Jedinična cena | Po pakovanje |
|---|---|---|
| 5 - 45 | RSD 407,40 | RSD 2.037 |
| 50 - 245 | RSD 242,50 | RSD 1.212 |
| 250 - 495 | RSD 178,238 | RSD 891 |
| 500+ | RSD 144,288 | RSD 721 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-252
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
16mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
49nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Height
2.4mm
Standards/Approvals
No
Width
6.2mm
Length
6.6mm
Automotive Standard
No
Detalji o proizvodu
Tranzistory MOSFET™ s širokým rozsahem rozkladných napětí nabízejí mimořádně nízké nabití a nízký odpor.