Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
55V
Series
STripFET F3
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
8.5mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
33.5nC
Maximum Operating Temperature
175°C
Length
6.6mm
Standards/Approvals
No
Width
6.2mm
Height
2.4mm
Automotive Standard
AEC-Q101
Detalji o proizvodu
Tranzistory MOSFET™ s širokým rozsahem rozkladných napětí nabízejí mimořádně nízké nabití a nízký odpor.
Informacije o stanju skladišta trenutno nisu dostupne.
RSD 1.528
RSD 305,55 komadno (u pakovanju od 5) (bez PDV-a)
RSD 1.833
RSD 366,66 komadno (u pakovanju od 5) (s PDV-om)
Standard
5
RSD 1.528
RSD 305,55 komadno (u pakovanju od 5) (bez PDV-a)
RSD 1.833
RSD 366,66 komadno (u pakovanju od 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
| količina | Jedinična cena | Po pakovanje |
|---|---|---|
| 5 - 45 | RSD 305,55 | RSD 1.528 |
| 50 - 245 | RSD 272,812 | RSD 1.364 |
| 250 - 495 | RSD 253,412 | RSD 1.267 |
| 500+ | RSD 226,738 | RSD 1.134 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
55V
Series
STripFET F3
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
8.5mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
33.5nC
Maximum Operating Temperature
175°C
Length
6.6mm
Standards/Approvals
No
Width
6.2mm
Height
2.4mm
Automotive Standard
AEC-Q101
Detalji o proizvodu
Tranzistory MOSFET™ s širokým rozsahem rozkladných napětí nabízejí mimořádně nízké nabití a nízký odpor.