Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
600V
Series
MDmesh
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
550mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
19nC
Maximum Gate Source Voltage Vgs
-25, +25V
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
25W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Height
16.4mm
Automotive Standard
No
Detalji o proizvodu
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
RSD 2.419
RSD 483,788 komadno (u pakovanju od 5) (bez PDV-a)
RSD 2.903
RSD 580,546 komadno (u pakovanju od 5) (s PDV-om)
Standard
5
RSD 2.419
RSD 483,788 komadno (u pakovanju od 5) (bez PDV-a)
RSD 2.903
RSD 580,546 komadno (u pakovanju od 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
| količina | Jedinična cena | Po pakovanje |
|---|---|---|
| 5 - 45 | RSD 483,788 | RSD 2.419 |
| 50 - 120 | RSD 421,95 | RSD 2.110 |
| 125+ | RSD 345,562 | RSD 1.728 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
600V
Series
MDmesh
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
550mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
19nC
Maximum Gate Source Voltage Vgs
-25, +25V
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
25W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Height
16.4mm
Automotive Standard
No
Detalji o proizvodu
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
