Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
80V
Package Type
H2PAK
Series
STripFET H7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
21mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
193nC
Maximum Gate Source Voltage Vgs
20V
Maximum Power Dissipation Pd
315W
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Width
15.8mm
Automotive Standard
No
Detalji o proizvodu
Tranzistory MOSFET™ s širokým rozsahem rozkladných napětí nabízejí mimořádně nízké nabití a nízký odpor.
Informacije o stanju skladišta trenutno nisu dostupne.
RSD 1.334
RSD 666,875 komadno (u pakovanju od 2) (bez PDV-a)
RSD 1.600
RSD 800,25 komadno (u pakovanju od 2) (s PDV-om)
Standard
2
RSD 1.334
RSD 666,875 komadno (u pakovanju od 2) (bez PDV-a)
RSD 1.600
RSD 800,25 komadno (u pakovanju od 2) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
2
| količina | Jedinična cena | Po pakovanje |
|---|---|---|
| 2 - 18 | RSD 666,875 | RSD 1.334 |
| 20 - 98 | RSD 595,338 | RSD 1.191 |
| 100 - 198 | RSD 554,112 | RSD 1.108 |
| 200+ | RSD 495,912 | RSD 992 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
80V
Package Type
H2PAK
Series
STripFET H7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
21mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
193nC
Maximum Gate Source Voltage Vgs
20V
Maximum Power Dissipation Pd
315W
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Width
15.8mm
Automotive Standard
No
Detalji o proizvodu
Tranzistory MOSFET™ s širokým rozsahem rozkladných napětí nabízejí mimořádně nízké nabití a nízký odpor.