Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
80V
Package Type
H2PAK
Series
STripFET H7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
21mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
315W
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
193nC
Maximum Operating Temperature
175°C
Height
4.8mm
Standards/Approvals
No
Width
15.8mm
Length
10.4mm
Automotive Standard
No
Detalji o proizvodu
Tranzistory MOSFET™ s širokým rozsahem rozkladných napětí nabízejí mimořádně nízké nabití a nízký odpor.
Informacije o stanju skladišta trenutno nisu dostupne.
RSD 1.339
RSD 669,30 komadno (u pakovanju od 2) (bez PDV-a)
RSD 1.606
RSD 803,16 komadno (u pakovanju od 2) (s PDV-om)
Standard
2
RSD 1.339
RSD 669,30 komadno (u pakovanju od 2) (bez PDV-a)
RSD 1.606
RSD 803,16 komadno (u pakovanju od 2) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
2
| količina | Jedinična cena | Po pakovanje |
|---|---|---|
| 2 - 18 | RSD 669,30 | RSD 1.339 |
| 20 - 98 | RSD 596,55 | RSD 1.193 |
| 100 - 198 | RSD 555,325 | RSD 1.111 |
| 200+ | RSD 497,125 | RSD 994 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
80V
Package Type
H2PAK
Series
STripFET H7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
21mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
315W
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
193nC
Maximum Operating Temperature
175°C
Height
4.8mm
Standards/Approvals
No
Width
15.8mm
Length
10.4mm
Automotive Standard
No
Detalji o proizvodu
Tranzistory MOSFET™ s širokým rozsahem rozkladných napětí nabízejí mimořádně nízké nabití a nízký odpor.