Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Package Type
H2PAK
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
315W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Maximum Operating Temperature
175°C
Length
15.8mm
Standards/Approvals
No
Width
10.4mm
Height
4.8mm
Automotive Standard
No
Detalji o proizvodu
Tranzistory MOSFET™ s širokým rozsahem rozkladných napětí nabízejí mimořádně nízké nabití a nízký odpor.
Informacije o stanju skladišta trenutno nisu dostupne.
RSD 1.157
RSD 578,362 komadno (u pakovanju od 2) (bez PDV-a)
RSD 1.388
RSD 694,034 komadno (u pakovanju od 2) (s PDV-om)
Standard
2
RSD 1.157
RSD 578,362 komadno (u pakovanju od 2) (bez PDV-a)
RSD 1.388
RSD 694,034 komadno (u pakovanju od 2) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
2
| količina | Jedinična cena | Po pakovanje |
|---|---|---|
| 2 - 18 | RSD 578,362 | RSD 1.157 |
| 20+ | RSD 572,30 | RSD 1.145 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Package Type
H2PAK
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
315W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Maximum Operating Temperature
175°C
Length
15.8mm
Standards/Approvals
No
Width
10.4mm
Height
4.8mm
Automotive Standard
No
Detalji o proizvodu
Tranzistory MOSFET™ s širokým rozsahem rozkladných napětí nabízejí mimořádně nízké nabití a nízký odpor.