Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
40V
Package Type
PowerFLAT
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
19mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
100W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
34nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Height
0.95mm
Length
6.35mm
Standards/Approvals
No
Width
5.4mm
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
Tranzistory MOSFET™ s širokým rozsahem rozkladných napětí nabízejí mimořádně nízké nabití a nízký odpor.
Informacije o stanju skladišta trenutno nisu dostupne.
RSD 11.882
RSD 118,825 komad (isporučivo u Reel) (bez PDV-a)
RSD 14.259
RSD 142,59 komad (isporučivo u Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
100
RSD 11.882
RSD 118,825 komad (isporučivo u Reel) (bez PDV-a)
RSD 14.259
RSD 142,59 komad (isporučivo u Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakovanje (kolut)
100
| količina | Jedinična cena | Po kolut |
|---|---|---|
| 100 - 490 | RSD 118,825 | RSD 1.188 |
| 500+ | RSD 99,425 | RSD 994 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
40V
Package Type
PowerFLAT
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
19mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
100W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
34nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Height
0.95mm
Length
6.35mm
Standards/Approvals
No
Width
5.4mm
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
Tranzistory MOSFET™ s širokým rozsahem rozkladných napětí nabízejí mimořádně nízké nabití a nízký odpor.