Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
3A
Maximum Drain Source Voltage Vds
60V
Package Type
SOT-223
Series
STripFET
Mount Type
Surface
Pin Count
4
Maximum Drain Source Resistance Rds
160mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.6W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6.4nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
-1.1V
Maximum Operating Temperature
175°C
Height
1.8mm
Length
6.7mm
Standards/Approvals
No
Width
3.7mm
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
Tranzistory MOSFET™ s širokým rozsahem rozkladných napětí nabízejí mimořádně nízké nabití a nízký odpor.
Informacije o stanju skladišta trenutno nisu dostupne.
RSD 6.184
RSD 61,838 komad (isporučivo u Reel) (bez PDV-a)
RSD 7.420
RSD 74,206 komad (isporučivo u Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
100
RSD 6.184
RSD 61,838 komad (isporučivo u Reel) (bez PDV-a)
RSD 7.420
RSD 74,206 komad (isporučivo u Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakovanje (kolut)
100
| količina | Jedinična cena | Po kolut |
|---|---|---|
| 100 - 490 | RSD 61,838 | RSD 618 |
| 500+ | RSD 56,988 | RSD 570 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
3A
Maximum Drain Source Voltage Vds
60V
Package Type
SOT-223
Series
STripFET
Mount Type
Surface
Pin Count
4
Maximum Drain Source Resistance Rds
160mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.6W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6.4nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
-1.1V
Maximum Operating Temperature
175°C
Height
1.8mm
Length
6.7mm
Standards/Approvals
No
Width
3.7mm
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
Tranzistory MOSFET™ s širokým rozsahem rozkladných napětí nabízejí mimořádně nízké nabití a nízký odpor.