Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Series
DeepGate, STripFET
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
3.2mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
300W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
160nC
Maximum Gate Source Voltage Vgs
-20, +20V
Maximum Operating Temperature
175°C
Width
4.6mm
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
Tranzistory MOSFET™ s širokým rozsahem rozkladných napětí nabízejí mimořádně nízké nabití a nízký odpor.
Informacije o stanju skladišta trenutno nisu dostupne.
RSD 1.229
RSD 614,738 komadno (u pakovanju od 2) (bez PDV-a)
RSD 1.475
RSD 737,686 komadno (u pakovanju od 2) (s PDV-om)
Standard
2
RSD 1.229
RSD 614,738 komadno (u pakovanju od 2) (bez PDV-a)
RSD 1.475
RSD 737,686 komadno (u pakovanju od 2) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
2
| količina | Jedinična cena | Po pakovanje |
|---|---|---|
| 2 - 18 | RSD 614,738 | RSD 1.229 |
| 20 - 98 | RSD 549,262 | RSD 1.099 |
| 100 - 198 | RSD 510,462 | RSD 1.021 |
| 200+ | RSD 455,90 | RSD 912 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Series
DeepGate, STripFET
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
3.2mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
300W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
160nC
Maximum Gate Source Voltage Vgs
-20, +20V
Maximum Operating Temperature
175°C
Width
4.6mm
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
Tranzistory MOSFET™ s širokým rozsahem rozkladných napětí nabízejí mimořádně nízké nabití a nízký odpor.