Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
2.3A
Maximum Drain Source Voltage Vds
20V
Series
STripFET V
Package Type
SOT-23
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
40mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
-8, +8V
Forward Voltage Vf
1.1V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Maximum Power Dissipation Pd
350mW
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
1.75mm
Length
3.04mm
Height
1.3mm
Automotive Standard
No
Detalji o proizvodu
Tranzistory MOSFET™ s širokým rozsahem rozkladných napětí nabízejí mimořádně nízké nabití a nízký odpor.
Informacije o stanju skladišta trenutno nisu dostupne.
RSD 958
RSD 95,788 komadno (u pakovanju od 10) (bez PDV-a)
RSD 1.149
RSD 114,946 komadno (u pakovanju od 10) (s PDV-om)
Standard
10
RSD 958
RSD 95,788 komadno (u pakovanju od 10) (bez PDV-a)
RSD 1.149
RSD 114,946 komadno (u pakovanju od 10) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
10
| količina | Jedinična cena | Po pakovanje |
|---|---|---|
| 10 - 90 | RSD 95,788 | RSD 958 |
| 100 - 490 | RSD 64,262 | RSD 643 |
| 500 - 990 | RSD 53,35 | RSD 534 |
| 1000 - 2990 | RSD 49,712 | RSD 497 |
| 3000+ | RSD 47,288 | RSD 473 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
2.3A
Maximum Drain Source Voltage Vds
20V
Series
STripFET V
Package Type
SOT-23
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
40mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
-8, +8V
Forward Voltage Vf
1.1V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Maximum Power Dissipation Pd
350mW
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
1.75mm
Length
3.04mm
Height
1.3mm
Automotive Standard
No
Detalji o proizvodu
Tranzistory MOSFET™ s širokým rozsahem rozkladných napětí nabízejí mimořádně nízké nabití a nízký odpor.