Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
60V
Package Type
SOIC
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2W
Minimum Operating Temperature
150°C
Typical Gate Charge Qg @ Vgs
15nC
Maximum Operating Temperature
-55°C
Transistor Configuration
Isolated
Height
1.25mm
Length
5mm
Standards/Approvals
No
Number of Elements per Chip
2
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
RSD 1.794
RSD 358,90 komadno (u pakovanju od 5) (bez PDV-a)
RSD 2.153
RSD 430,68 komadno (u pakovanju od 5) (s PDV-om)
Standard
5
RSD 1.794
RSD 358,90 komadno (u pakovanju od 5) (bez PDV-a)
RSD 2.153
RSD 430,68 komadno (u pakovanju od 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
| količina | Jedinična cena | Po pakovanje |
|---|---|---|
| 5 - 45 | RSD 358,90 | RSD 1.794 |
| 50 - 120 | RSD 312,825 | RSD 1.564 |
| 125+ | RSD 255,838 | RSD 1.279 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
60V
Package Type
SOIC
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2W
Minimum Operating Temperature
150°C
Typical Gate Charge Qg @ Vgs
15nC
Maximum Operating Temperature
-55°C
Transistor Configuration
Isolated
Height
1.25mm
Length
5mm
Standards/Approvals
No
Number of Elements per Chip
2
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
