Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
60V
Package Type
SOIC
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2W
Minimum Operating Temperature
150°C
Typical Gate Charge Qg @ Vgs
15nC
Maximum Operating Temperature
-55°C
Transistor Configuration
Isolated
Height
1.25mm
Length
5mm
Standards/Approvals
No
Number of Elements per Chip
2
Automotive Standard
No
Detalji o proizvodu
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
RSD 15.762
RSD 315,25 komad (isporučivo u Reel) (bez PDV-a)
RSD 18.915
RSD 378,30 komad (isporučivo u Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
50
RSD 15.762
RSD 315,25 komad (isporučivo u Reel) (bez PDV-a)
RSD 18.915
RSD 378,30 komad (isporučivo u Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakovanje (kolut)
50
| količina | Jedinična cena | Po kolut |
|---|---|---|
| 50 - 120 | RSD 315,25 | RSD 1.576 |
| 125+ | RSD 254,625 | RSD 1.273 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
60V
Package Type
SOIC
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2W
Minimum Operating Temperature
150°C
Typical Gate Charge Qg @ Vgs
15nC
Maximum Operating Temperature
-55°C
Transistor Configuration
Isolated
Height
1.25mm
Length
5mm
Standards/Approvals
No
Number of Elements per Chip
2
Automotive Standard
No
Detalji o proizvodu
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
